? semiconductor components industries, llc, 2016 september, 2016 ? rev. 16 1 publication order number: mjd31/d mjd31 (npn), mjd32 (pnp) complementary power transistors dpak for surface mount applications designed for general purpose amplifier and low speed switching applications. features ? lead formed for surface mount applications in plastic sleeves ? straight lead version in plastic sleeves (?1? suffix) ? lead formed version in 16 mm tape and reel (?t4? suffix) ? electrically similar to popular tip31 and tip32 series ? epoxy meets ul 94, v?0 @ 0.125 in ? njv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free and are rohs compliant maximum ratings rating symbol max unit collector?emitter voltage mjd31, mjd32 mjd31c, mjd32c v ceo 40 100 vdc collector?base voltage mjd31, mjd32 mjd31c, mjd32c v cb 40 100 vdc emitter?base voltage v eb 5.0 vdc collector current ? continuous i c 3.0 adc collector current ? peak i cm 5.0 adc base current i b 1.0 adc total power dissipation @ t c = 25 c derate above 25 c p d 15 0.12 w w/ c total power dissipation @ t a = 25 c derate above 25 c p d 1.56 0.012 w w/ c operating and storage junction temperature range t j , t stg ?65 to + 150 c esd ? human body model hbm 3b v esd ? machine model mm c v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 8.3 c/w thermal resistance, junction?to?ambient* r ja 80 c/w lead temperature for soldering purposes t l 260 c *these ratings are applicable when surface mounted on the minimum pad sizes recommended. silicon power transistors 3 amperes 40 and 100 volts 15 watts see detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. ordering information ipak case 369d style 1 dpak case 369c style 1 marking diagrams a = site code y = year ww = work week xx = 1, 1c, 2, or 2c g = pb?free package ayww j3xxg yww j3xxg www. onsemi.com dpak ipak 4 1 2 3 4 1 2 3 1 base 3 emitter collector 2,4 1 base 3 emitter collector 2,4 complementary
mjd31 (npn), mjd32 (pnp) www. onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter sustaining voltage (note 1) (i c = 30 madc, i b = 0) mjd31, mjd32 mjd31c, mjd32c v ceo(sus) 40 100 ? ? vdc collector cutoff current (v ce = 40 vdc, i b = 0) mjd31, mjd32 (v ce = 60 vdc, i b = 0) mjd31c, mjd32c i ceo ? ? 50 50 adc collector cutoff current (v ce = rated v ceo , v eb = 0) ices ? 20 adc emitter cutoff current (v be = 5 vdc, i c = 0) i ebo ? 1 madc on characteristics (note 1) dc current gain (i c = 1 adc, v ce = 4 vdc) (i c = 3 adc, v ce = 4 vdc) h fe 25 10 ? 50 collector?emitter saturation voltage (i c = 3 adc, i b = 375 madc) v ce(sat) ? 1.2 vdc base?emitter on voltage (i c = 3 adc, v ce = 4 vdc) v be(on) ? 1.8 vdc dynamic characteristics current gain ? bandwidth product (note 2) (i c = 500 madc, v ce = 10 vdc, f test = 1 mhz) f t 3 ? mhz small?signal current gain (i c = 0.5 adc, v ce = 10 vdc, f = 1 khz) h fe 20 ? product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. pulse test: pulse width 300 s, duty cycle 2%. 2. f t = ? h fe ?? f test .
mjd31 (npn), mjd32 (pnp) www. onsemi.com 3 25 25 figure 1. power derating t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissipation (watts) figure 2. switching time test circuit 3 0.03 i c , collector current (amps) 0.03 0.05 0.07 0.1 0.2 0.5 0.7 i b1 = i b2 i c /i b = 10 t s = t s - 1/8 t f t j = 25 c t, time (s) 0.3 2 1 0.7 0.5 0.3 t s 0.2 0.1 0.07 0.05 12 figure 3. turn?on time 2 i c , collector current (amps) 0.02 i c /i b = 10 t j = 25 c t, time (s) 1 0.7 0.5 0.3 0.1 0.07 0.05 0.03 +11 v 25 s 0 -9 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1% 51 r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma reverse all polarities for pnp. 0.03 0.07 0.3 3 0.1 0.7 0.05 0.5 1 t r @ v cc = 30 v t r @ v cc = 10 v t d @ v be(off) = 2 v t f @ v cc = 30 v t f @ v cc = 10 v 2.5 0 2 1.5 1 0.5 t a t c figure 4. turn?off time t a (surface mount) t c typical characteristics figure 5. thermal response 0.000001 0.001 0.0001 0.1 100 1 0.01 0.01 t, pulse time (sec) r ja ( c/w) 110 100 1000 0.1 10 0.00001 0.2 single pulse 0.1 0.05 0.02 0.01 duty cycle = 0.5
mjd31 (npn), mjd32 (pnp) www. onsemi.com 4 typical characteristics ? mjd31, mjd31c (npn) 1 10 100 1000 0.01 0.1 1 10 i c , collector current (a) figure 6. dc current gain at v ce = 4 v h fe , dc current gain v ce = 4 v 25 c 150 c ?55 c 1 10 100 1000 0.01 0.1 1 10 i c , collector current (a) figure 7. dc current gain at v ce = 2 v h fe , dc current gain v ce = 2 v 25 c 150 c ?55 c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.001 0.01 0.1 1 10 i c , collector current (a) figure 8. collector?emitter saturation voltage v ce(sat) , coll?emitt saturation voltage (v) i c /i b = 10 25 c 150 c ?55 c v be(sat) , base?emitt saturation voltage (v) i c , collector current (a) figure 9. base?emitter saturation voltage 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.001 0.01 0.1 1 10 v ce = 5 v v be(on) , base?emitter on voltage (v) i c , collector current (a) figure 10. base-emitter ?on? voltage ?55 c 25 c 150 c 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.001 0.01 0.1 1 10 i c /i b = 10 ?55 c 25 c 150 c 0 0.4 0.8 1.2 1.6 2 0.01 0.1 1 10 100 1000 i b , base current (ma) figure 11. collector saturation region v ce , collector?emitter voltage (v) 10 ma 100 ma 500 ma 1 a i c = 3 a t a = 25 c
mjd31 (npn), mjd32 (pnp) www. onsemi.com 5 typical characteristics ? mjd31, mjd31c (npn) 1 10 100 1000 0.1 1 10 100 v r , reverse voltage (v) figure 12. capacitance c, capacitance (pf) c ib c ob t a = 25 c 1 10 100 0.001 0.01 0.1 1 10 v ce = 5 v t a = 25 c i c , collector current (a) figure 13. current?gain?bandwidth product f t , current?gain ? bandwidth product (mhz) 0.01 0.1 1 10 1 10 100 v ce , collector?emitter voltage (v) figure 14. safe operating area i c , collector current (a)
mjd31 (npn), mjd32 (pnp) www. onsemi.com 6 typical characteristics ? mjd32, mjd32c (pnp) 1 10 100 1000 0.01 0.1 1 10 i c , collector current (a) figure 15. dc current gain at v ce = 4 v h fe , dc current gain v ce = 4 v 25 c 150 c ?55 c 1 10 100 1000 0.01 0.1 1 1 0 i c , collector current (a) figure 16. dc current gain at v ce = 2 v h fe , dc current gain 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.001 0.01 0.1 1 10 v ce = 2 v 25 c 150 c ?55 c 25 c 150 c ?55 c i c , collector current (a) figure 17. collector?emitter saturation voltage v ce(sat) , coll?emitt saturation voltage (v) i c /i b = 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.001 0.01 0.1 1 1 0 25 c 150 c ?55 c i c , collector current (a) figure 18. base?emitter saturation voltage v be(sat) , base?emitter saturation voltage (v) i c /i b = 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.001 0.01 0.1 1 10 v ce = 5 v 25 c 150 c ?55 c i c , collector current (a) figure 19. base?emitter ?on? voltage v be(on) , base?emitter on voltage (v) 0 0.4 0.8 1.2 1.6 2 0.01 0.1 1 10 100 100 0 i b , base current (ma) figure 20. collector saturation region v ce , collector?emitter voltage (v) 10 ma 100 ma 500 ma 1 a i c = 3 a t a = 25 c
mjd31 (npn), mjd32 (pnp) www. onsemi.com 7 typical characteristics 1 10 100 1000 0.1 1 10 100 v r , reverse voltage (v) figure 21. capacitance c, capacitance (pf) c ib c ob t a = 25 c 1 10 100 0.001 0.01 0.1 1 10 i c , collector current (a) figure 22. current?gain?bandwidth product f t , current?gain ? bandwidth product (mhz) v ce = 5 v t a = 25 c 0.01 0.1 1 10 1 10 100 v ce , collector?emitter voltage (v) figure 23. safe operating area i c , collector current (a) 1 ms 1 s
mjd31 (npn), mjd32 (pnp) www. onsemi.com 8 ordering information device package type package shipping ? mjd31cg dpak (pb?free) 369c 75 units / rail njvmjd31cg* dpak (pb?free) 369c 75 units / rail mjd31c1g ipak (pb?free) 369d 75 units / rail mjd31crlg dpak (pb?free) 369c 1,800 / tape & reel njvmjd31crlg* dpak (pb?free) 369c 1,800 / tape & reel mjd31ct4g dpak (pb?free) 369c 2,500 / tape & reel NJVMJD31CT4G* dpak (pb?free) 369c 2,500 / tape & reel mjd31t4g dpak (pb?free) 369c 2,500 / tape & reel njvmjd31t4g* dpak (pb?free) 369c 2,500 / tape & reel mjd32cg dpak (pb?free) 369c 75 units / rail njvmjd32cg* dpak (pb?free) 369c 75 units / rail mjd32crlg dpak (pb?free) 369c 1,800 / tape & reel mjd32ct4g dpak (pb?free) 369c 2,500 / tape & reel njvmjd32ct4g* dpak (pb?free) 369c 2,500 / tape & reel mjd32rlg dpak (pb?free) 369c 1,800 / tape & reel mjd32t4g dpak (pb?free) 369c 2,500 / tape & reel njvmjd32t4g* dpak (pb?free) 369c 2,500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *njv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable.
mjd31 (npn), mjd32 (pnp) www. onsemi.com 9 package dimensions dpak (single gauge) case 369c issue f style 1: pin 1. base 2. collector 3. emitter 4. collector b d e b3 l3 l4 b2 m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.028 0.045 0.72 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 7. optional mold feature. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.114 ref 2.90 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw e bottom view z bottom view side view top view alternate constructions note 7 z
mjd31 (npn), mjd32 (pnp) www. onsemi.com 10 package dimensions style 1: pin 1. base 2. collector 3. emitter 4. collector 123 4 v s a k ?t? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? ipak case 369d issue c on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mjd31/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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